STB18N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Resistance :

220mOhm

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1240pF @ 100V

Element Configuration :

Single

Case Connection :

DRAIN

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn)

Mount :

Surface Mount

Fall Time (Typ) :

9 ns

Length :

10.4mm

Gate to Source Voltage (Vgs) :

25V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Height :

4.6mm

Vgs (Max) :

±25V

Turn-Off Delay Time :

9 ns

Power Dissipation :

110W

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Turn On Delay Time :

36 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

15A Tc

Factory Lead Time :

17 Weeks

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

15A

Width :

9.35mm

Pulsed Drain Current-Max (IDM) :

60A

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

220m Ω @ 7.5A, 10V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Power Dissipation-Max :

110W Tc

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Drain to Source Breakdown Voltage :

650V

JESD-609 Code :

e3

Lead Free :

Lead Free

FET Type :

N-Channel

Base Part Number :

STB18N

Rise Time :

7ns

Number of Elements :

1

Series :

MDmesh™ V