STB18N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Application :

SWITCHING

FET Type :

N-Channel

Width :

9.35mm

Height :

4.6mm

Rds On (Max) @ Id, Vgs :

280m Ω @ 6.5A, 10V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

52A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

25V

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

2

Series :

MDmesh™ II Plus

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Rise Time :

9ns

Fall Time (Typ) :

10.6 ns

Number of Pins :

3

Turn-Off Delay Time :

47 ns

Gate Charge (Qg) (Max) @ Vgs :

21.5nC @ 10V

Power Dissipation :

110W

Drain to Source Voltage (Vdss) :

600V

Base Part Number :

STB18N

Resistance :

280mOhm

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

791pF @ 100V

Power Dissipation-Max :

110W Tc

Vgs (Max) :

±25V

DS Breakdown Voltage-Min :

600V

Lead Free :

Lead Free

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

JESD-30 Code :

R-PSSO-G2

Number of Channels :

1

Turn On Delay Time :

12 ns

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

Length :

10.4mm

Factory Lead Time :

26 Weeks

Continuous Drain Current (ID) :

13A