STB180N55F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Width :

10.4mm

Power Dissipation :

330W

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Elements :

1

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

480A

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

50 ns

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Turn-Off Delay Time :

110 ns

Turn On Delay Time :

25 ns

Peak Reflow Temperature (Cel) :

245

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Length :

10.75mm

Pin Count :

3

Rise Time :

150ns

Rds On (Max) @ Id, Vgs :

3.5m Ω @ 60A, 10V

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Base Part Number :

STB180N

Gate to Source Voltage (Vgs) :

20V

Series :

STripFET™

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Vgs (Max) :

±20V

FET Type :

N-Channel

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Number of Pins :

3

Drain to Source Breakdown Voltage :

55V

Power Dissipation-Max :

330W Tc

Transistor Application :

SWITCHING

Height :

4.6mm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

120A

Number of Terminations :

2

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

ECCN Code :

EAR99