STB170NF04
- Mfr.Part #
- STB170NF04
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A D2PAK
- Stock
- 6,861
- In Stock :
- 6,861
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Min Operating Temperature :
- -55°C
- Drain to Source Voltage (Vdss) :
- 40V
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Power Dissipation-Max :
- 300W Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 80A
- Turn On Delay Time :
- 26 ns
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Rds On (Max) @ Id, Vgs :
- 5mOhm @ 40A, 10V
- Supplier Device Package :
- D2PAK
- Rise Time :
- 57ns
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Input Capacitance :
- 9nF
- Turn-Off Delay Time :
- 100 ns
- Power Dissipation :
- 300W
- Rds On Max :
- 5 mΩ
- Mount :
- Surface Mount
- Max Operating Temperature :
- 175°C
- Base Part Number :
- STB170N
- Element Configuration :
- Single
- Series :
- STripFET™ II
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 66 ns
- Drain to Source Breakdown Voltage :
- 40V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C~175°C TJ
- FET Type :
- N-Channel
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 170nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Resistance :
- 5mOhm
- Datasheets
- STB170NF04

N-Channel Tape & Reel (TR) 5mOhm @ 40A, 10V ±20V 9000pF @ 25V 170nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB170NF04 Overview
A device's maximal input capacitance is 9000pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 80A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 100 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 5mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 26 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
STB170NF04 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 100 ns
single MOSFETs transistor is 5mOhm
a 40V drain to source voltage (Vdss)
STB170NF04 Applications
There are a lot of STMicroelectronics
STB170NF04 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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