STB16PF06LT4
- Mfr.Part #
- STB16PF06LT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 16A D2PAK
- Stock
- 27,967
- In Stock :
- 27,967
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 630pF @ 25V
- Rise Time :
- 90ns
- Voltage - Rated DC :
- -60V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Fall Time (Typ) :
- 19.5 ns
- Peak Reflow Temperature (Cel) :
- 245
- Pin Count :
- 4
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 64A
- Series :
- STripFET™
- Qualification Status :
- Not Qualified
- Power Dissipation-Max :
- 70W Tc
- JESD-609 Code :
- e3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate to Source Voltage (Vgs) :
- 16V
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 1.5V @ 100μA
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 25.5 ns
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 8A, 10V
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Mount :
- Surface Mount
- FET Type :
- P-Channel
- Power Dissipation :
- 70W
- Gate Charge (Qg) (Max) @ Vgs :
- 15.5nC @ 4.5V
- Continuous Drain Current (ID) :
- 16A
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Drain to Source Breakdown Voltage :
- -60V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Drain to Source Voltage (Vdss) :
- 60V
- Number of Terminations :
- 2
- Base Part Number :
- STB16P
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Current Rating :
- -16A
- Vgs (Max) :
- ±16V
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 250 mJ
- Datasheets
- STB16PF06LT4

P-Channel Tape & Reel (TR) 125m Ω @ 8A, 10V ±16V 630pF @ 25V 15.5nC @ 4.5V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB16PF06LT4 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 250 mJ.A device's maximal input capacitance is 630pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 16A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 25.5 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 64A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 16V volts.This transistor requires a 60V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (5V 10V).
STB16PF06LT4 Features
the avalanche energy rating (Eas) is 250 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 25.5 ns
based on its rated peak drain current 64A.
a 60V drain to source voltage (Vdss)
STB16PF06LT4 Applications
There are a lot of STMicroelectronics
STB16PF06LT4 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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