STB16NS25T4
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- Mfr.Part #
- STB16NS25T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 16A D2PAK
- Stock
- 47,800
- In Stock ：
- 47,800
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 250V
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Current Rating :
- 16A
- Pulsed Drain Current-Max (IDM) :
- 64A
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-30 Code :
- R-PSSO-G2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 16A Tc
- Drain to Source Breakdown Voltage :
- 250V
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Series :
- MESH OVERLAY™
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 245
- Power Dissipation :
- 140W
- Drain-source On Resistance-Max :
- 0.28Ohm
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 80nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 280m Ω @ 8A, 10V
- Lead Free :
- Lead Free
- Terminal Finish :
- Matte Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 20V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Continuous Drain Current (ID) :
- 16A
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Rise Time :
- 25ns
- Power Dissipation-Max :
- 140W Tc
- Terminal Form :
- Gull wing
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 75 ns
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Base Part Number :
- STB16N
- Fall Time (Typ) :
- 30 ns
- FET Type :
- N-Channel
- Operating Temperature :
- 175°C TJ
- Element Configuration :
- Single
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1270pF @ 25V
- Datasheets
- STB16NS25T4
N-Channel Tape & Reel (TR) 280m Ω @ 8A, 10V ±20V 1270pF @ 25V 80nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB16NS25T4 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 200 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1270pF @ 25V.This device conducts a continuous drain current (ID) of 16A, which is the maximum continuous current transistor can conduct.Using VGS=250V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 250V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 75 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 64A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STB16NS25T4 Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 75 ns
based on its rated peak drain current 64A.
STB16NS25T4 Applications
There are a lot of STMicroelectronics
STB16NS25T4 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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