STB16NK65Z-S

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Mfr.Part #
STB16NK65Z-S
Manufacturer
STMicroelectronics
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 650V 13A I2PAK
Stock
34,404
In Stock :
34,404

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
4.5V @ 100μA
JESD-30 Code :
R-PSIP-T3
Continuous Drain Current (ID) :
13A
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
190W Tc
Pin Count :
3
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Resistance :
380mOhm
Voltage - Rated DC :
650V
Fall Time (Typ) :
17 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Breakdown Voltage :
650V
Series :
SuperMESH™
Turn-Off Delay Time :
68 ns
Pulsed Drain Current-Max (IDM) :
52A
Transistor Application :
SWITCHING
Number of Elements :
1
Rise Time :
25ns
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Vgs (Max) :
±30V
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
2750pF @ 25V
Number of Terminations :
3
Gate to Source Voltage (Vgs) :
30V
Current Rating :
13A
Terminal Finish :
Tin (Sn)
Additional Feature :
AVALANCHE RATED
Gate Charge (Qg) (Max) @ Vgs :
89nC @ 10V
Avalanche Energy Rating (Eas) :
350 mJ
JESD-609 Code :
e3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Rds On (Max) @ Id, Vgs :
500m Ω @ 6.5A, 10V
Element Configuration :
Single
Mount :
Through Hole
FET Type :
N-Channel
Packaging :
Tube
Power Dissipation :
190W
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Qualification Status :
Not Qualified
Base Part Number :
STB16N
Mounting Type :
Through Hole
Lead Free :
Lead Free
Reach Compliance Code :
not_compliant
Datasheets
STB16NK65Z-S
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB16NK65Z-S from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Number of Terminations:3, Base Part Number:STB16N, Mounting Type:Through Hole, STB16NK65Z-S pinout, STB16NK65Z-S datasheet PDF, STB16NK65Z-S amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB16NK65Z-S ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB16NK65Z-S


N-Channel Tube 500m Ω @ 6.5A, 10V ±30V 2750pF @ 25V 89nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

STB16NK65Z-S Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 350 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2750pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 68 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 52A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.

STB16NK65Z-S Features


the avalanche energy rating (Eas) is 350 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 52A.


STB16NK65Z-S Applications


There are a lot of STMicroelectronics
STB16NK65Z-S applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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