STB16NK65Z-S
- Mfr.Part #
- STB16NK65Z-S
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 13A I2PAK
- Stock
- 34,404
- In Stock :
- 34,404
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- JESD-30 Code :
- R-PSIP-T3
- Continuous Drain Current (ID) :
- 13A
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 190W Tc
- Pin Count :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 13A Tc
- Resistance :
- 380mOhm
- Voltage - Rated DC :
- 650V
- Fall Time (Typ) :
- 17 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 650V
- Series :
- SuperMESH™
- Turn-Off Delay Time :
- 68 ns
- Pulsed Drain Current-Max (IDM) :
- 52A
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Rise Time :
- 25ns
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 2750pF @ 25V
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- Current Rating :
- 13A
- Terminal Finish :
- Tin (Sn)
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 89nC @ 10V
- Avalanche Energy Rating (Eas) :
- 350 mJ
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 6.5A, 10V
- Element Configuration :
- Single
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Packaging :
- Tube
- Power Dissipation :
- 190W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Base Part Number :
- STB16N
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Reach Compliance Code :
- not_compliant
- Datasheets
- STB16NK65Z-S

N-Channel Tube 500m Ω @ 6.5A, 10V ±30V 2750pF @ 25V 89nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
STB16NK65Z-S Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 350 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2750pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 13A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=650V. And this device has 650V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 68 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 52A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.
STB16NK65Z-S Features
the avalanche energy rating (Eas) is 350 mJ
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 68 ns
based on its rated peak drain current 52A.
STB16NK65Z-S Applications
There are a lot of STMicroelectronics
STB16NK65Z-S applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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