STB16NF06LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

60V

Current Rating :

16A

Base Part Number :

STB16N

Pulsed Drain Current-Max (IDM) :

64A

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Turn On Delay Time :

10 ns

Threshold Voltage :

1V

FET Type :

N-Channel

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Mounting Type :

Surface Mount

Power Dissipation-Max :

45W Tc

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

245

Pin Count :

4

Vgs (Max) :

±16V

Terminal Form :

Gull wing

Number of Pins :

3

Element Configuration :

Single

Length :

10.75mm

Case Connection :

DRAIN

Continuous Drain Current (ID) :

16A

Dual Supply Voltage :

60V

Height :

4.6mm

Termination :

SMD/SMT

Lead Free :

Lead Free

Resistance :

90mOhm

Rds On (Max) @ Id, Vgs :

90m Ω @ 8A, 10V

Transistor Application :

SWITCHING

Width :

10.4mm

Series :

STripFET™

Operating Temperature :

-55°C~175°C TJ

Rise Time :

37ns

Power Dissipation :

45W

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Radiation Hardening :

No

Turn-Off Delay Time :

20 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 4.5V

Nominal Vgs :

4 V

Voltage - Rated DC :

60V

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Fall Time (Typ) :

12.5 ns

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

16V

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

345pF @ 25V