STB16N65M5

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Mfr.Part #
STB16N65M5
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 650V 12A D2PAK
Stock
1
In Stock :
1

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Terminal Finish :
Matte Tin (Sn) - annealed
Vgs (Max) :
±25V
Fall Time (Typ) :
8 ns
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Additional Feature :
ULTRA-LOW RESISTANCE
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Pulsed Drain Current-Max (IDM) :
48A
Avalanche Energy Rating (Eas) :
200 mJ
Pbfree Code :
yes
REACH SVHC :
No SVHC
JESD-30 Code :
R-PSSO-G2
Gate to Source Voltage (Vgs) :
25V
Turn-Off Delay Time :
6 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Surface Mount
Base Part Number :
STB16N
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Terminal Form :
Gull wing
Operating Temperature :
150°C TJ
Current - Continuous Drain (Id) @ 25°C :
12A Tc
Peak Reflow Temperature (Cel) :
245
Mounting Type :
Surface Mount
Rise Time :
7ns
Turn On Delay Time :
25 ns
Number of Elements :
1
Power Dissipation :
90W
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Height :
4.6mm
Gate Charge (Qg) (Max) @ Vgs :
31nC @ 10V
Radiation Hardening :
No
Transistor Application :
SWITCHING
Number of Terminations :
2
Input Capacitance (Ciss) (Max) @ Vds :
1250pF @ 100V
Case Connection :
DRAIN
Series :
MDmesh™ V
Length :
10.75mm
Continuous Drain Current (ID) :
12A
Rds On (Max) @ Id, Vgs :
299m Ω @ 6A, 10V
Drain to Source Breakdown Voltage :
650V
Packaging :
Digi-Reel®
Threshold Voltage :
4V
Lead Free :
Lead Free
Number of Pins :
3
Vgs(th) (Max) @ Id :
5V @ 250μA
RoHS Status :
ROHS3 Compliant
Resistance :
279mOhm
FET Type :
N-Channel
Element Configuration :
Single
Power Dissipation-Max :
90W Tc
Pin Count :
4
Width :
10.4mm
Datasheets
STB16N65M5
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB16N65M5 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STB16N, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Number of Pins:3, STB16N65M5 pinout, STB16N65M5 datasheet PDF, STB16N65M5 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB16N65M5 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB16N65M5


N-Channel Digi-Reel® 299m Ω @ 6A, 10V ±25V 1250pF @ 100V 31nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB16N65M5 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1250pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.In this device, the drain-source breakdown voltage is 650V and VGS=650V, so the drain-source breakdown voltage is 650V in this case.It is [6 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 48A.A turn-on delay time of 25 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 25V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STB16N65M5 Features


the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 12A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 6 ns
based on its rated peak drain current 48A.
a threshold voltage of 4V


STB16N65M5 Applications


There are a lot of STMicroelectronics
STB16N65M5 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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