STB160NF3LLT4

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Mfr.Part #
STB160NF3LLT4
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 30V 160A D2PAK
Stock
37,734
In Stock :
37,734

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
FET Type :
N-Channel
ECCN Code :
EAR99
Pin Count :
4
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Min Operating Temperature :
-55°C
Number of Elements :
1
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Avalanche Energy Rating (Eas) :
1200 mJ
Radiation Hardening :
No
RoHS Status :
ROHS3 Compliant
Vgs(th) (Max) @ Id :
1V @ 250μA
Peak Reflow Temperature (Cel) :
245
Max Operating Temperature :
175°C
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Application :
SWITCHING
Turn On Delay Time :
50 ns
Terminal Finish :
Tin (Sn)
Power Dissipation :
300W
Rds On (Max) @ Id, Vgs :
3.3m Ω @ 80A, 10V
Current Rating :
160A
Base Part Number :
STB160N
Voltage - Rated DC :
30V
Operating Mode :
ENHANCEMENT MODE
Pulsed Drain Current-Max (IDM) :
640A
Continuous Drain Current (ID) :
160A
JESD-30 Code :
R-PSSO-G2
Additional Feature :
LOGIC LEVEL COMPATIBLE
Case Connection :
DRAIN
Series :
STripFET™ III
Number of Terminations :
2
Terminal Form :
Gull wing
Turn-Off Delay Time :
150 ns
JESD-609 Code :
e3
Current - Continuous Drain (Id) @ 25°C :
160A Tc
Number of Pins :
3
Power Dissipation-Max :
300W Tc
Input Capacitance (Ciss) (Max) @ Vds :
5500pF @ 25V
Mount :
Surface Mount
Drain-source On Resistance-Max :
0.004ohm
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
110nC @ 4.5V
Rise Time :
350ns
Gate to Source Voltage (Vgs) :
16V
Time@Peak Reflow Temperature-Max (s) :
30
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
120 ns
Vgs (Max) :
±16V
Datasheets
STB160NF3LLT4
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB160NF3LLT4 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Base Part Number:STB160N, Number of Terminations:2, Number of Pins:3, STB160NF3LLT4 pinout, STB160NF3LLT4 datasheet PDF, STB160NF3LLT4 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB160NF3LLT4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB160NF3LLT4


N-Channel Tape & Reel (TR) 3.3m Ω @ 80A, 10V ±16V 5500pF @ 25V 110nC @ 4.5V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB160NF3LLT4 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 1200 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 30V.As a result of its turn-off delay time, which is 150 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 640A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 50 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 16VV.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

STB160NF3LLT4 Features


the avalanche energy rating (Eas) is 1200 mJ
a continuous drain current (ID) of 160A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 150 ns
based on its rated peak drain current 640A.


STB160NF3LLT4 Applications


There are a lot of STMicroelectronics
STB160NF3LLT4 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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