STB160N75F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Factory Lead Time :

12 Weeks

Height :

4.6mm

Pin Count :

3

JESD-30 Code :

R-PSSO-G2

Termination :

SMD/SMT

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

480A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

6750pF @ 25V

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

85nC @ 10V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

4m Ω @ 60A, 10V

Base Part Number :

STB160N

Power Dissipation :

330W

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

2

Dual Supply Voltage :

75V

Peak Reflow Temperature (Cel) :

245

Lead Free :

Lead Free

Number of Pins :

3

Series :

STripFET™

Turn On Delay Time :

22 ns

Turn-Off Delay Time :

100 ns

Resistance :

3.7mOhm

Time@Peak Reflow Temperature-Max (s) :

30

Fall Time (Typ) :

15 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Drain to Source Breakdown Voltage :

75V

Number of Elements :

1

Nominal Vgs :

4 V

Length :

10.75mm

Continuous Drain Current (ID) :

60A

Power Dissipation-Max :

330W Tc

Width :

10.4mm

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Rise Time :

65ns

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - annealed