STB15NM60ND
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- Mfr.Part #
- STB15NM60ND
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 14A D2PAK
- Stock
- 38,983
- In Stock ：
- 38,983
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Fall Time (Typ) :
- 28 ns
- Threshold Voltage :
- 4V
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 1250pF @ 50V
- Width :
- 10.4mm
- Vgs (Max) :
- ±25V
- Lead Free :
- Lead Free
- Series :
- FDmesh™ II
- REACH SVHC :
- No SVHC
- Length :
- 10.75mm
- Drain to Source Breakdown Voltage :
- 600V
- Number of Pins :
- 3
- Rise Time :
- 20ns
- Turn On Delay Time :
- 17 ns
- Pulsed Drain Current-Max (IDM) :
- 56A
- Operating Mode :
- ENHANCEMENT MODE
- Continuous Drain Current (ID) :
- 14A
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 47 ns
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 245
- Pin Count :
- 4
- Base Part Number :
- STB15N
- Power Dissipation-Max :
- 125W Tc
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Resistance :
- 299mOhm
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Terminations :
- 2
- Gate to Source Voltage (Vgs) :
- 25V
- ECCN Code :
- EAR99
- Height :
- 4.6mm
- Mounting Type :
- Surface Mount
- Radiation Hardening :
- No
- Power Dissipation :
- 125W
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 299m Ω @ 7A, 10V
- Nominal Vgs :
- 4 V
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Datasheets
- STB15NM60ND
N-Channel Tape & Reel (TR) 299m Ω @ 7A, 10V ±25V 1250pF @ 50V 40nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB15NM60ND Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1250pF @ 50V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 14A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 600V, and this device has a drainage-to-source breakdown voltage of 600VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 47 ns.Peak drain current is 56A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 17 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.In this case, the threshold voltage of the transistor is 4V, which means that it will not activate any of its functions when its threshold voltage reaches 4V.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STB15NM60ND Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 47 ns
based on its rated peak drain current 56A.
a threshold voltage of 4V
STB15NM60ND Applications
There are a lot of STMicroelectronics
STB15NM60ND applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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