STB15NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

14A Tc

JESD-30 Code :

R-PSSO-G2

Power Dissipation :

125W

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Rds On (Max) @ Id, Vgs :

299m Ω @ 7A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Series :

MDmesh™ II

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate to Source Voltage (Vgs) :

25V

Mounting Type :

Surface Mount

Radiation Hardening :

No

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

600V

Mount :

Surface Mount

Turn On Delay Time :

12 ns

Continuous Drain Current (ID) :

14A

Drain-source On Resistance-Max :

0.299Ohm

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

1250pF @ 50V

ECCN Code :

EAR99

Vgs (Max) :

±25V

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

245

Fall Time (Typ) :

30 ns

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Pin Count :

3

Turn-Off Delay Time :

80 ns

Rise Time :

14ns

Base Part Number :

STB15N

Packaging :

Tape and Reel (TR)

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

125W Tc

Number of Elements :

1

Transistor Element Material :

SILICON

Number of Terminations :

2

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

56A