STB15NK50ZT4
- Mfr.Part #
- STB15NK50ZT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 14A D2PAK
- Stock
- 2,292
- In Stock :
- 2,292
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Drain-source On Resistance-Max :
- 0.34Ohm
- Voltage - Rated DC :
- 500V
- Gate Charge (Qg) (Max) @ Vgs :
- 106nC @ 10V
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 300 mJ
- Number of Terminations :
- 2
- Current Rating :
- 14A
- Power Dissipation-Max :
- 160W Tc
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STB15N
- ECCN Code :
- EAR99
- Additional Feature :
- High Voltage
- Operating Temperature :
- -50°C~150°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Series :
- SuperMESH™
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vgs (Max) :
- ±30V
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 56A
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 500V
- Power Dissipation :
- 160W
- Mount :
- Surface Mount
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- JESD-609 Code :
- e3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rise Time :
- 23ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 2260pF @ 25V
- Pbfree Code :
- yes
- Turn-Off Delay Time :
- 62 ns
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Terminal Form :
- Gull wing
- Continuous Drain Current (ID) :
- 14A
- Fall Time (Typ) :
- 15 ns
- Reach Compliance Code :
- not_compliant
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 245
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 340m Ω @ 7A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Datasheets
- STB15NK50ZT4

N-Channel Tape & Reel (TR) 340m Ω @ 7A, 10V ±30V 2260pF @ 25V 106nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB15NK50ZT4 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 300 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2260pF @ 25V.This device conducts a continuous drain current (ID) of 14A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 62 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 56A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STB15NK50ZT4 Features
the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 56A.
STB15NK50ZT4 Applications
There are a lot of STMicroelectronics
STB15NK50ZT4 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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