STB15N80K5
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- Mfr.Part #
- STB15N80K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N CH 800V 14A D2PAK
- Stock
- 2,870
- In Stock ：
- 2,870
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Form :
- Gull wing
- Packaging :
- Cut Tape (CT)
- RoHS Status :
- ROHS3 Compliant
- Turn-Off Delay Time :
- 44 ns
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 56A
- Element Configuration :
- Single
- Rise Time :
- 17.6ns
- Factory Lead Time :
- 26 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.4mm
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 32nC @ 10V
- Power Dissipation :
- 190W
- Width :
- 9.35mm
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Continuous Drain Current (ID) :
- 14A
- Reach Compliance Code :
- not_compliant
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 100V
- Turn On Delay Time :
- 19 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 375m Ω @ 7A, 10V
- JESD-30 Code :
- R-PSSO-G2
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- SuperMESH5™
- Power Dissipation-Max :
- 190W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- STB15N
- ECCN Code :
- EAR99
- Vgs (Max) :
- ±30V
- Drain to Source Breakdown Voltage :
- 800V
- Number of Terminations :
- 2
- Fall Time (Typ) :
- 10 ns
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Height :
- 4.6mm
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheets
- STB15N80K5
N-Channel Cut Tape (CT) 375m Ω @ 7A, 10V ±30V 1100pF @ 100V 32nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB15N80K5 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1100pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 14A.With a drain-source breakdown voltage of 800V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 800V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 44 ns.Peak drain current for this device is 56A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 19 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STB15N80K5 Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 44 ns
based on its rated peak drain current 56A.
STB15N80K5 Applications
There are a lot of STMicroelectronics
STB15N80K5 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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