STB15N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

Power Dissipation-Max :

85W Tc

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

44A

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

11A

Series :

MDmesh™ V

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

Mounting Type :

Surface Mount

Turn-Off Delay Time :

30 ns

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

25V

JESD-609 Code :

e3

FET Type :

N-Channel

Height :

4.6mm

Transistor Element Material :

SILICON

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Base Part Number :

STB15N

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

650V

Rds On (Max) @ Id, Vgs :

340m Ω @ 5.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

810pF @ 100V

Lead Free :

Lead Free

JESD-30 Code :

R-PSSO-G2

Factory Lead Time :

17 Weeks

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Radiation Hardening :

No

Turn On Delay Time :

30 ns

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

245

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

5V @ 250μA

Resistance :

340mOhm

Number of Elements :

1

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Power Dissipation :

85W

ECCN Code :

EAR99

Terminal Finish :

Matte Tin (Sn) - annealed

Vgs (Max) :

±25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

9.35mm

Length :

10.4mm

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB