STB155N3LH6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

245

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 25V

Power Dissipation-Max :

110W Tc

Vgs (Max) :

±20V

Length :

10.75mm

JESD-609 Code :

e3

Resistance :

3mOhm

Number of Terminations :

2

Factory Lead Time :

20 Weeks

Number of Elements :

1

Pin Count :

3

Series :

DeepGATE™, STripFET™ VI

JEDEC-95 Code :

TO-252

Lead Free :

Lead Free

Packaging :

Cut Tape (CT)

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Avalanche Energy Rating (Eas) :

525 mJ

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STB155N

Terminal Finish :

Matte Tin (Sn) - annealed

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

30V

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

FET Type :

N-Channel

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Fall Time (Typ) :

40 ns

Rise Time :

85ns

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Power Dissipation :

110W

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 5V

Turn On Delay Time :

15 ns

Radiation Hardening :

No

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

100 ns

Rds On (Max) @ Id, Vgs :

3m Ω @ 40A, 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

Threshold Voltage :

1V

Case Connection :

DRAIN

Width :

10.4mm

Mount :

Surface Mount

Additional Feature :

ULTRA-LOW RESISTANCE

Continuous Drain Current (ID) :

80A

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Height :

4.6mm