STB155N3H6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

3650pF @ 25V

Height :

4.6mm

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Length :

10.75mm

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 10V

Series :

DeepGATE™, STripFET™ VI

Rds On (Max) @ Id, Vgs :

3m Ω @ 40A, 10V

REACH SVHC :

No SVHC

Power Dissipation :

70W

Pin Count :

4

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Additional Feature :

ULTRA-LOW RESISTANCE

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Packaging :

Cut Tape (CT)

Lead Free :

Lead Free

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±20V

Power Dissipation-Max :

110W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Turn On Delay Time :

20 ns

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

525 mJ

Number of Pins :

3

Continuous Drain Current (ID) :

80A

Turn-Off Delay Time :

50 ns

Mount :

Surface Mount

Terminal Position :

Single

Rise Time :

90ns

Base Part Number :

STB155N

JESD-30 Code :

R-PSSO-G2

Drain to Source Voltage (Vdss) :

30V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Width :

10.4mm

Terminal Form :

Gull wing

Threshold Voltage :

2V

Case Connection :

DRAIN

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE