STB150NF04
- Mfr.Part #
- STB150NF04
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 80A D2PAK
- Stock
- 1,005
- In Stock :
- 1,005
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 300W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 3650pF @ 25V
- Pin Count :
- 4
- Reach Compliance Code :
- not_compliant
- Number of Elements :
- 1
- Fall Time (Typ) :
- 45 ns
- Series :
- STripFET™ II
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 150ns
- Peak Reflow Temperature (Cel) :
- 245
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 70 ns
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 150nC @ 10V
- Continuous Drain Current (ID) :
- 80A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Drain to Source Breakdown Voltage :
- 40V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 2
- Mounting Type :
- Surface Mount
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- Resistance :
- 7mOhm
- Operating Temperature :
- -55°C~175°C TJ
- Avalanche Energy Rating (Eas) :
- 600 mJ
- Rds On (Max) @ Id, Vgs :
- 7m Ω @ 40A, 10V
- Base Part Number :
- STB150N
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 300W
- Transistor Application :
- SWITCHING
- Qualification Status :
- Not Qualified
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Datasheets
- STB150NF04

N-Channel Tape & Reel (TR) 7m Ω @ 40A, 10V ±20V 3650pF @ 25V 150nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STB150NF04 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 600 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 3650pF @ 25V.This device has a continuous drain current (ID) of [80A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=40V, the drain-source breakdown voltage is 40V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 70 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).
STB150NF04 Features
the avalanche energy rating (Eas) is 600 mJ
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 70 ns
STB150NF04 Applications
There are a lot of STMicroelectronics
STB150NF04 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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