STB150N3LH6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Rise Time :

85ns

Power Dissipation :

110W

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Base Part Number :

STB150N

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown

Drain to Source Breakdown Voltage :

30V

Rds On (Max) @ Id, Vgs :

3m Ω @ 40A, 10V

Power Dissipation-Max :

110W Tc

Continuous Drain Current (ID) :

80A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Fall Time (Typ) :

40 ns

Turn-Off Delay Time :

100 ns

FET Type :

N-Channel

Series :

DeepGATE™, STripFET™ VI

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3800pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

2.5V @ 250μA