STB14NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pin Count :

4

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1300pF @ 50V

Terminal Finish :

Matte Tin (Sn) - annealed

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Rise Time :

13ns

Peak Reflow Temperature (Cel) :

245

Power Dissipation :

125W

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Operating Temperature :

150°C TJ

Pulsed Drain Current-Max (IDM) :

48A

Turn-Off Delay Time :

55 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Qualification Status :

Not Qualified

Power Dissipation-Max :

125W Tc

Series :

MDmesh™ II

Element Configuration :

Single

Mount :

Surface Mount

Terminal Form :

Gull wing

Fall Time (Typ) :

20 ns

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Transistor Application :

SWITCHING

Number of Terminations :

2

Base Part Number :

STB14N

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Continuous Drain Current (ID) :

12A

Drain to Source Breakdown Voltage :

650V

ECCN Code :

EAR99

Vgs (Max) :

±25V

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V