STB14NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Finish :

Matte Tin (Sn) - annealed

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

816pF @ 50V

REACH SVHC :

No SVHC

Element Configuration :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C TJ

Vgs (Max) :

±25V

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

12A

Series :

MDmesh™ II

Rise Time :

9ns

Turn On Delay Time :

10.2 ns

Length :

10.75mm

Resistance :

320mOhm

Number of Elements :

1

Base Part Number :

STB14N

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Turn-Off Delay Time :

42 ns

Gate to Source Voltage (Vgs) :

25V

Drain to Source Breakdown Voltage :

500V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

3V

Terminal Position :

Single

Width :

10.4mm

Fall Time (Typ) :

32 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

320m Ω @ 6A, 10V

Current - Continuous Drain (Id) @ 25°C :

12A Tc

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 100µA

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

90W Tc

Power Dissipation :

90W

Peak Reflow Temperature (Cel) :

245

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Pins :

3

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Height :

4.6mm

Factory Lead Time :

26 Weeks

Pulsed Drain Current-Max (IDM) :

48A

Lead Free :

Lead Free

Packaging :

Cut Tape (CT)

Pin Count :

4

Terminal Form :

Gull wing

Transistor Element Material :

SILICON