STB14NK60ZT4
- Mfr.Part #
- STB14NK60ZT4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 13.5A D2PAK
- Stock
- 6,824
- In Stock :
- 6,824
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±30V
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Peak Reflow Temperature (Cel) :
- 245
- Turn-Off Delay Time :
- 62 ns
- Width :
- 10.4mm
- Resistance :
- 500MOhm
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 2220pF @ 25V
- Current - Continuous Drain (Id) @ 25°C :
- 13.5A Tc
- Element Configuration :
- Single
- Power Dissipation-Max :
- 160W Tc
- Base Part Number :
- STB14N
- Power Dissipation :
- 160W
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 6A, 10V
- Pulsed Drain Current-Max (IDM) :
- 54A
- FET Type :
- N-Channel
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 13.5A
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Termination :
- SMD/SMT
- Gate to Source Voltage (Vgs) :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- No SVHC
- Turn On Delay Time :
- 26 ns
- Drain to Source Breakdown Voltage :
- 600V
- Height :
- 4.6mm
- Fall Time (Typ) :
- 13 ns
- Threshold Voltage :
- 3.75V
- Voltage - Rated DC :
- 600V
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Rise Time :
- 18ns
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- Length :
- 10.75mm
- Series :
- SuperMESH™
- Dual Supply Voltage :
- 600V
- Current Rating :
- 13.5A
- Operating Temperature :
- -55°C~150°C TJ
- Additional Feature :
- AVALANCHE RATED
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 12 Weeks
- Number of Terminations :
- 2
- Vgs(th) (Max) @ Id :
- 4.5V @ 100μA
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 10V
- Nominal Vgs :
- 3.75 V
- Terminal Form :
- Gull wing
- Pin Count :
- 3
- Datasheets
- STB14NK60ZT4

N-Channel Tape & Reel (TR) 500m Ω @ 6A, 10V ±30V 2220pF @ 25V 75nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
In D2PAK and TO-220FP packages, the STB14NK60ZT4 is an N-channel 600 V, 0.45 typ., 13.5 A SuperMESHTM Power MOSFET. It's an N-channel Zener-protected Power MOSFET designed with STMicroelectronics' SuperMESHTM technology, which was obtained by optimizing ST's well-known strip-based PowerMESHTM layout. According to the STB14NK60ZT4 datasheet, in addition to a significant reduction in on resistance, STB14NK60ZT4 is designed to ensure a high degree of dv/dt capability for the most demanding applications.
STB14NK60ZT4 Features
Zener-protected
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Extremely high dv/dt capability
Very good manufacturing repeatability
STB14NK60ZT4 Applications
Switching applications
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