STB141NF55-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

300W Tc

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Power Dissipation :

300W

Fall Time (Typ) :

45 ns

Gate Charge (Qg) (Max) @ Vgs :

142nC @ 10V

Drain to Source Breakdown Voltage :

55V

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Rise Time :

150ns

Continuous Drain Current (ID) :

80A

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

1300 mJ

Input Capacitance (Ciss) (Max) @ Vds :

5300pF @ 25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin (Sn)

Transistor Application :

SWITCHING

Mount :

Through Hole

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

320A

Operating Temperature :

-55°C~175°C TJ

Resistance :

-6.5mOhm

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Series :

STripFET™ II

Number of Elements :

1

Pin Count :

3

Rds On (Max) @ Id, Vgs :

8m Ω @ 40A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STB141N

Turn-Off Delay Time :

125 ns

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V