STB13NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

150°C TJ

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation :

90W

Number of Terminations :

2

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Mount :

Surface Mount

Length :

10.75mm

Pulsed Drain Current-Max (IDM) :

44A

Turn On Delay Time :

3 ns

Lead Free :

Lead Free

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

JESD-30 Code :

R-PSSO-G2

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

245

Series :

MDmesh™ II

Radiation Hardening :

No

Rise Time :

8ns

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Turn-Off Delay Time :

30 ns

Number of Pins :

3

Resistance :

360mOhm

Number of Elements :

1

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

360m Ω @ 5.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

600V

Threshold Voltage :

3V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 50V

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

11A

Width :

10.4mm

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

25V

Height :

4.6mm

Factory Lead Time :

26 Weeks

Power Dissipation-Max :

90W Tc

Transistor Application :

SWITCHING

Lifecycle Status :

NRND (Last Updated: 7 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STB13N

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

4

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

200 mJ

Drain to Source Voltage (Vdss) :

600V