STB13NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

200 mJ

Series :

MDmesh™ II

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

150°C TJ

Drain to Source Breakdown Voltage :

500V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

100W Tc

Base Part Number :

STB13N

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn)

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

40

Rise Time :

15ns

FET Type :

N-Channel

Number of Elements :

1

Transistor Application :

SWITCHING

Radiation Hardening :

No

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Vgs (Max) :

±25V

Turn On Delay Time :

30 ns

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Pin Count :

4

Pulsed Drain Current-Max (IDM) :

48A

Fall Time (Typ) :

10 ns

Gate to Source Voltage (Vgs) :

25V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

12A

Peak Reflow Temperature (Cel) :

245

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 50V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

Turn-Off Delay Time :

40 ns

Number of Pins :

3

Power Dissipation :

100W

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

320m Ω @ 6A, 10V

Mount :

Surface Mount

JESD-609 Code :

e3