STB13NK60ZT4

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Mfr.Part #
STB13NK60ZT4
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 600V 13A D2PAK
Stock
11,547
In Stock :
11,547

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Pin Count :
4
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Transistor Application :
SWITCHING
Current - Continuous Drain (Id) @ 25°C :
13A Tc
Turn On Delay Time :
22 ns
Number of Terminations :
2
Pulsed Drain Current-Max (IDM) :
52A
Number of Elements :
1
Terminal Form :
Gull wing
Element Configuration :
Single
Input Capacitance (Ciss) (Max) @ Vds :
2030pF @ 25V
JESD-609 Code :
e3
Series :
SuperMESH™
Packaging :
Tape and Reel (TR)
Fall Time (Typ) :
12 ns
Rise Time :
14ns
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Element Material :
SILICON
Base Part Number :
STB13N
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Terminal Finish :
Matte Tin (Sn)
Gate Charge (Qg) (Max) @ Vgs :
92nC @ 10V
Turn-Off Delay Time :
61 ns
ECCN Code :
EAR99
Operating Mode :
ENHANCEMENT MODE
Resistance :
550mOhm
Continuous Drain Current (ID) :
4.5A
Drain to Source Breakdown Voltage :
600V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
550m Ω @ 4.5A, 10V
RoHS Status :
ROHS3 Compliant
Width :
9.35mm
Height :
4.6mm
Number of Pins :
3
FET Type :
N-Channel
Operating Temperature :
-55°C~150°C TJ
Factory Lead Time :
12 Weeks
Peak Reflow Temperature (Cel) :
245
Mount :
Surface Mount
REACH SVHC :
No SVHC
Time@Peak Reflow Temperature-Max (s) :
30
Power Dissipation :
150W
Dual Supply Voltage :
600V
Radiation Hardening :
No
Avalanche Energy Rating (Eas) :
400 mJ
Termination :
SMD/SMT
Lead Free :
Lead Free
Vgs (Max) :
±30V
Voltage - Rated DC :
600V
Nominal Vgs :
3.75 V
Length :
10.4mm
Power Dissipation-Max :
150W Tc
Vgs(th) (Max) @ Id :
4.5V @ 100μA
JESD-30 Code :
R-PSSO-G2
Gate to Source Voltage (Vgs) :
30V
Current Rating :
13A
Datasheets
STB13NK60ZT4
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB13NK60ZT4 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:2, Mounting Type:Surface Mount, Base Part Number:STB13N, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, Operating Temperature:-55°C~150°C TJ, STB13NK60ZT4 pinout, STB13NK60ZT4 datasheet PDF, STB13NK60ZT4 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB13NK60ZT4 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB13NK60ZT4


N-Channel Tape & Reel (TR) 550m Ω @ 4.5A, 10V ±30V 2030pF @ 25V 92nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB13NK60ZT4 Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 400 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2030pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 4.5A amps.In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.It is [61 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 52A.A turn-on delay time of 22 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

STB13NK60ZT4 Features


the avalanche energy rating (Eas) is 400 mJ
a continuous drain current (ID) of 4.5A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 61 ns
based on its rated peak drain current 52A.


STB13NK60ZT4 Applications


There are a lot of STMicroelectronics
STB13NK60ZT4 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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