STB13N80K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.4mm

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Resistance :

450mOhm

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

5V @ 100µA

Terminal Form :

Gull wing

Width :

9.35mm

Rise Time :

16ns

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

48A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Cut Tape (CT)

Turn On Delay Time :

16 ns

Factory Lead Time :

26 Weeks

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 100V

FET Type :

N-Channel

Power Dissipation :

190W

Mount :

Surface Mount

Element Configuration :

Single

Number of Elements :

1

Number of Pins :

3

Turn-Off Delay Time :

42 ns

Height :

4.6mm

Power Dissipation-Max :

190W Tc

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

12A

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

16 ns

Case Connection :

DRAIN

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Series :

SuperMESH5™

Drain to Source Breakdown Voltage :

800V

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

450m Ω @ 6A, 10V

ECCN Code :

EAR99

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Base Part Number :

STB13N