STB13N60M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

26 Weeks

Turn On Delay Time :

11 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

600V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Input Capacitance (Ciss) (Max) @ Vds :

580pF @ 100V

RoHS Status :

ROHS3 Compliant

Width :

9.35mm

Rise Time :

10ns

Vgs (Max) :

±25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Mode :

ENHANCEMENT MODE

Height :

4.6mm

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

25V

Continuous Drain Current (ID) :

11A

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Radiation Hardening :

No

Case Connection :

DRAIN

Packaging :

Cut Tape (CT)

Mounting Type :

Surface Mount

Resistance :

380mOhm

Base Part Number :

STB13N

Power Dissipation :

110W

Length :

10.4mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Turn-Off Delay Time :

41 ns

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

44A

Terminal Form :

Gull wing

Avalanche Energy Rating (Eas) :

125 mJ

Fall Time (Typ) :

9.5 ns

Rds On (Max) @ Id, Vgs :

380m Ω @ 5.5A, 10V

Series :

MDmesh™ II Plus

Drain to Source Breakdown Voltage :

650V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Number of Terminations :

2

Element Configuration :

Single

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

110W Tc

Operating Temperature :

-55°C~150°C TJ