STB130NS04ZBT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

40 ns

Power Dissipation :

300W

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

80A

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Rise Time :

10ns

Current Rating :

80A

Number of Pins :

3

Gate to Source Voltage (Vgs) :

18V

Operating Temperature :

-55°C~175°C TJ

Series :

MESH OVERLAY™

Rds On (Max) @ Id, Vgs :

9m Ω @ 40A, 10V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Drain to Source Breakdown Voltage :

33V

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

ECCN Code :

EAR99

Power Dissipation-Max :

300W Tc

Avalanche Energy Rating (Eas) :

500 mJ

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Vgs (Max) :

Clamped

Vgs(th) (Max) @ Id :

4V @ 1mA

Lead Free :

Lead Free

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Turn-Off Delay Time :

220 ns

Drain-source On Resistance-Max :

0.009Ohm

Fall Time (Typ) :

100 ns

FET Type :

N-Channel

Number of Terminations :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

245