STB130N6F7

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Mfr.Part #
STB130N6F7
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 60V 80A D2PAK
Stock
15,004
In Stock :
15,004

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Surface Mount
Lead Free :
Lead Free
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Base Part Number :
STB130N
Mount :
Surface Mount
Drive Voltage (Max Rds On,Min Rds On) :
10V
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Factory Lead Time :
22 Weeks
Drain to Source Voltage (Vdss) :
60V
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
5m Ω @ 40A, 10V
Series :
STripFET™ F7
Gate Charge (Qg) (Max) @ Vgs :
42nC @ 10V
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
ECCN Code :
EAR99
Operating Temperature :
-55°C~175°C TJ
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Input Capacitance (Ciss) (Max) @ Vds :
2600pF @ 25V
Vgs(th) (Max) @ Id :
4V @ 250µA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max :
160W Tc
Continuous Drain Current (ID) :
80A
Packaging :
Cut Tape (CT)
Datasheets
STB130N6F7
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STB130N6F7 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Base Part Number:STB130N, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~175°C TJ, STB130N6F7 pinout, STB130N6F7 datasheet PDF, STB130N6F7 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STB130N6F7 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STB130N6F7


N-Channel Cut Tape (CT) 5m Ω @ 40A, 10V ±20V 2600pF @ 25V 42nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

STB130N6F7 Description

STB130N6F7 is an N-channel Power MOSFET utilizing STripFET? F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.


STB130N6F7 Features

  • High avalanche ruggedness

  • Among the lowest RDS(on) on the market

  • The excellent figure of merit (FOM)

  • Low Crss/Ciss ratio for EMI immunity


STB130N6F7 Applications

  • High current switching (up to 4A) loads

  • Relay/Solenoid driver

  • Uninterrupted Power Supplies

  • Power Supply Circuits

  • Inverter Circuits


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