STB12NM60N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Number of Elements :

1

Terminal Form :

Gull wing

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

40

Pulsed Drain Current-Max (IDM) :

40A

Transistor Element Material :

SILICON

Series :

MDmesh™ II

Drain to Source Breakdown Voltage :

600V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

410m Ω @ 5A, 10V

Rise Time :

9ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

245

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Terminal Finish :

Matte Tin (Sn)

Base Part Number :

STB12N

Mount :

Surface Mount

FET Type :

N-Channel

Turn On Delay Time :

15 ns

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Turn-Off Delay Time :

60 ns

Gate to Source Voltage (Vgs) :

25V

Power Dissipation-Max :

90W Tc

Fall Time (Typ) :

10 ns

Pin Count :

3

Power Dissipation :

90W

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

200 mJ

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

960pF @ 50V

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Vgs (Max) :

±25V

Number of Terminations :

2

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

30.5nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

10A