STB12NM50T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Power Dissipation :

160W

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Contact Plating :

Tin

Peak Reflow Temperature (Cel) :

245

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

JESD-609 Code :

e3

REACH SVHC :

No SVHC

Mounting Type :

Surface Mount

Element Configuration :

Single

Power Dissipation-Max :

160W Tc

Voltage - Rated DC :

550V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Avalanche Energy Rating (Eas) :

400 mJ

Number of Elements :

1

Number of Pins :

3

Current Rating :

12A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Drain to Source Breakdown Voltage :

500V

Continuous Drain Current (ID) :

12A

Base Part Number :

STB12N

Mount :

Surface Mount

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

MDmesh™

Rise Time :

10ns

Turn On Delay Time :

20 ns

Factory Lead Time :

26 Weeks

Threshold Voltage :

4V

Operating Temperature :

-65°C~150°C TJ

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

48A

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Pin Count :

3

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Current - Continuous Drain (Id) @ 25°C :

12A Tc

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

350m Ω @ 6A, 10V

Nominal Vgs :

4 V

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5V @ 50μA

Resistance :

350mOhm