STB120N4F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Continuous Drain Current (ID) :

80A

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Pin Count :

4

Peak Reflow Temperature (Cel) :

245

JESD-609 Code :

e3

Turn On Delay Time :

20 ns

FET Type :

N-Channel

Height :

4.6mm

Element Configuration :

Single

Transistor Element Material :

SILICON

Width :

9.35mm

Transistor Application :

SWITCHING

Number of Pins :

3

Fall Time (Typ) :

20 ns

Series :

Automotive, AEC-Q101, DeepGATE™, STripFET™ VI

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

Turn-Off Delay Time :

40 ns

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Power Dissipation :

110W

Power Dissipation-Max :

110W Tc

Factory Lead Time :

20 Weeks

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

3850pF @ 25V

Rise Time :

70ns

Lead Free :

Lead Free

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

4m Ω @ 40A, 10V

Length :

10.4mm

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Terminal Finish :

Matte Tin (Sn) - annealed

Base Part Number :

STB120N

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

4mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

40V