STB120N10F4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Base Part Number :

STB120N

Power Dissipation-Max :

300W Tc

RoHS Status :

ROHS3 Compliant

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

AVALANCHE RATED

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Number of Terminations :

2

Drain-source On Resistance-Max :

0.01Ohm

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Drain Current-Max (Abs) (ID) :

120A

ECCN Code :

EAR99

Number of Elements :

1

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

390A

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Avalanche Energy Rating (Eas) :

215 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

Vgs (Max) :

±20V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Polarity/Channel Type :

N-Channel