STB11NM80T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Matte Tin (Sn) - annealed

Mount :

Surface Mount

Element Configuration :

Single

Turn-Off Delay Time :

46 ns

Power Dissipation-Max :

150W Tc

Resistance :

400mOhm

Pulsed Drain Current-Max (IDM) :

44A

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

245

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Height :

4.6mm

Voltage - Rated DC :

800V

Current Rating :

11A

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Drain to Source Breakdown Voltage :

800V

Rds On (Max) @ Id, Vgs :

400m Ω @ 5.5A, 10V

Width :

10.4mm

Operating Temperature :

-65°C~150°C TJ

Pin Count :

3

Power Dissipation :

150W

Turn On Delay Time :

22 ns

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Length :

10.75mm

JESD-30 Code :

R-PSSO-G2

Threshold Voltage :

4V

Fall Time (Typ) :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

43.6nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

11A Tc

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

1630pF @ 25V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

26 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Lead Free :

Lead Free

Number of Elements :

1

Series :

MDmesh™

Rise Time :

17ns

Base Part Number :

STB11N

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

2

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

11A

Transistor Application :

SWITCHING

FET Type :

N-Channel

Radiation Hardening :

No