STB11NM60T4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

20 ns

Continuous Drain Current (ID) :

11A

Number of Elements :

1

Fall Time (Typ) :

11 ns

Terminal Form :

Gull wing

Power Dissipation :

160W

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

Operating Temperature :

-65°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Breakdown Voltage :

600V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

5V @ 250μA

Base Part Number :

STB11N

Pin Count :

3

Voltage - Rated DC :

600V

Gate to Source Voltage (Vgs) :

30V

ECCN Code :

EAR99

Number of Terminations :

2

Number of Pins :

3

REACH SVHC :

No SVHC

Rise Time :

20ns

Width :

10.4mm

Mount :

Surface Mount

Length :

10.75mm

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn) - annealed

Turn-Off Delay Time :

6 ns

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

650V

Current Rating :

11A

Peak Reflow Temperature (Cel) :

245

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Pulsed Drain Current-Max (IDM) :

44A

Lifecycle Status :

NRND (Last Updated: 7 months ago)

Lead Free :

Lead Free

JESD-609 Code :

e3

Resistance :

450mOhm

Series :

MDmesh™

Transistor Element Material :

SILICON

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Height :

4.6mm

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

450m Ω @ 5.5A, 10V

Transistor Application :

SWITCHING

Threshold Voltage :

4V

Power Dissipation-Max :

160W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±30V

Time@Peak Reflow Temperature-Max (s) :

30

Radiation Hardening :

No