STB11NM60FDT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Min Operating Temperature :

-65°C

Rise Time :

16ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Series :

FDmesh™

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

44A

Max Operating Temperature :

150°C

Rds On (Max) @ Id, Vgs :

450m Ω @ 5.5A, 10V

Base Part Number :

STB11N

Gate to Source Voltage (Vgs) :

30V

Number of Terminations :

2

Drain to Source Breakdown Voltage :

600V

Number of Pins :

3

Terminal Finish :

Matte Tin (Sn) - annealed

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

30

Packaging :

Tape and Reel (TR)

Pin Count :

3

Continuous Drain Current (ID) :

11A

JESD-609 Code :

e3

ECCN Code :

EAR99

Fall Time (Typ) :

15 ns

Vgs(th) (Max) @ Id :

5V @ 250μA

Current Rating :

11A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

160W Tc

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V

Power Dissipation :

160W

Voltage - Rated DC :

600V

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Turn On Delay Time :

20 ns

Resistance :

450mOhm

Peak Reflow Temperature (Cel) :

245

Transistor Application :

SWITCHING

Radiation Hardening :

No

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB