STB11NM60-1

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

450m Ω @ 5.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain-source On Resistance-Max :

0.45Ohm

Rise Time :

20ns

Power Dissipation :

160W

Turn On Delay Time :

20 ns

Power Dissipation-Max :

160W Tc

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

600V

Number of Terminations :

3

Packaging :

Tube

Mount :

Through Hole

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Base Part Number :

STB11N

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

44A

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 25V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

650V

Vgs (Max) :

±30V

Current Rating :

11A

Radiation Hardening :

No

Voltage - Rated DC :

600V

Turn-Off Delay Time :

6 ns

Continuous Drain Current (ID) :

11A

Fall Time (Typ) :

11 ns

Series :

MDmesh™

Operating Temperature :

-65°C~150°C TJ

Number of Pins :

3

FET Type :

N-Channel