STB11NK50ZT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Fall Time (Typ) :

15 ns

Nominal Vgs :

3.75 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±30V

Series :

SuperMESH™

Turn-Off Delay Time :

41 ns

Termination :

SMD/SMT

Additional Feature :

AVALANCHE RATED

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Power Dissipation :

125W

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Pulsed Drain Current-Max (IDM) :

40A

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Voltage - Rated DC :

500V

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

520m Ω @ 4.5A, 10V

Lead Free :

Lead Free

Base Part Number :

STB11N

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

30

Element Configuration :

Single

Packaging :

Tape and Reel (TR)

Pin Count :

3

Gate Charge (Qg) (Max) @ Vgs :

68nC @ 10V

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn) - annealed

Power Dissipation-Max :

125W Tc

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Rise Time :

18ns

Drain to Source Breakdown Voltage :

500V

Continuous Drain Current (ID) :

4.5A

Peak Reflow Temperature (Cel) :

245

Turn On Delay Time :

14.5 ns

Terminal Form :

Gull wing

Radiation Hardening :

No

Dual Supply Voltage :

500V

Operating Mode :

ENHANCEMENT MODE

Threshold Voltage :

3.75V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1390pF @ 25V

ECCN Code :

EAR99

Current Rating :

10A

JESD-30 Code :

R-PSSO-G2

Resistance :

520mOhm

Factory Lead Time :

12 Weeks