STB11N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

9A

Turn On Delay Time :

23 ns

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Series :

MDmesh™ V

Gate to Source Voltage (Vgs) :

25V

Transistor Element Material :

SILICON

Number of Elements :

1

Drain-source On Resistance-Max :

0.48Ohm

Height :

4.6mm

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

9A

Turn-Off Delay Time :

23 ns

Number of Terminations :

2

Length :

10.4mm

Vgs (Max) :

±25V

Element Configuration :

Single

Radiation Hardening :

No

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

480m Ω @ 4.5A, 10V

Operating Temperature :

150°C TJ

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Mounting Type :

Surface Mount

Power Dissipation :

85W

FET Type :

N-Channel

Base Part Number :

STB11N

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

85W Tc

Factory Lead Time :

17 Weeks

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Terminal Form :

Gull wing

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

644pF @ 100V

Width :

9.35mm

Drain to Source Breakdown Voltage :

650V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB