STB11N52K3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Number of Pins :

3

ECCN Code :

EAR99

Threshold Voltage :

3.75V

Number of Terminations :

2

Turn-Off Delay Time :

281 ns

FET Type :

N-Channel

JESD-30 Code :

R-PSSO-G2

Height :

4.6mm

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Number of Elements :

1

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

51nC @ 10V

Drain to Source Breakdown Voltage :

525V

Turn On Delay Time :

7 ns

Base Part Number :

STB11N

Power Dissipation :

125W

Rds On (Max) @ Id, Vgs :

510m Ω @ 5A, 10V

Radiation Hardening :

No

REACH SVHC :

No SVHC

Series :

SuperMESH3™

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Pulsed Drain Current-Max (IDM) :

40A

Continuous Drain Current (ID) :

10A

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

ULTRA-LOW RESISTANCE

Length :

10.75mm

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.51Ohm

Fall Time (Typ) :

42 ns

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Pin Count :

4

Avalanche Energy Rating (Eas) :

170 mJ

Lead Free :

Lead Free

Power Dissipation-Max :

125W Tc

Rise Time :

18ns

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

10.4mm

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 50V