STB10NK60Z-1
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- Mfr.Part #
- STB10NK60Z-1
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 10A I2PAK
- Stock
- 3,891
- In Stock ：
- 3,891
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Voltage - Rated DC :
- 600V
- Rise Time :
- 20ns
- Turn-Off Delay Time :
- 55 ns
- Gate to Source Voltage (Vgs) :
- 30V
- Vgs (Max) :
- ±30V
- Series :
- SuperMESH™
- Input Capacitance (Ciss) (Max) @ Vds :
- 1370pF @ 25V
- Transistor Element Material :
- SILICON
- Operating Mode :
- ENHANCEMENT MODE
- Drain-source On Resistance-Max :
- 0.75Ohm
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Terminal Finish :
- Tin (Sn)
- Pin Count :
- 3
- Power Dissipation :
- 115W
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Mount :
- Through Hole
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 30 ns
- Base Part Number :
- STB10N
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Power Dissipation-Max :
- 115W Tc
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 20 ns
- Packaging :
- Tube
- Current Rating :
- 10A
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 4.5A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 10A
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 600V
- JESD-609 Code :
- e3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheets
- STB10NK60Z-1
N-Channel Tube 750m Ω @ 4.5A, 10V ±30V 1370pF @ 25V 70nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
STB10NK60Z-1 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1370pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 10A.With a drain-source breakdown voltage of 600V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 600V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 55 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 20 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
STB10NK60Z-1 Features
a continuous drain current (ID) of 10A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 55 ns
STB10NK60Z-1 Applications
There are a lot of STMicroelectronics
STB10NK60Z-1 applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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