STB10N95K5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

5V @ 100µA

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Drain-source On Resistance-Max :

0.8Ohm

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Drain Current-Max (Abs) (ID) :

8A

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

8A

Power Dissipation-Max :

130W Tc

Series :

SuperMESH5™

Number of Elements :

1

Fall Time (Typ) :

15 ns

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

800m Ω @ 4A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

630pF @ 100V

Terminal Form :

THROUGH-HOLE

RoHS Status :

ROHS3 Compliant

Rise Time :

14ns

FET Type :

N-Channel

Element Configuration :

Single

Power Dissipation :

130W

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Packaging :

Cut Tape (CT)

Mount :

Surface Mount

Weight :

3.949996g

Drain to Source Breakdown Voltage :

950V

Base Part Number :

STB10N9

Current - Continuous Drain (Id) @ 25°C :

8A Tc

ECCN Code :

EAR99

Vgs (Max) :

±30V

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Turn On Delay Time :

22 ns

Factory Lead Time :

26 Weeks

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

30V

Number of Channels :

1

Turn-Off Delay Time :

51 ns