SS8550CTA
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- Mfr.Part #
- SS8550CTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 25V 1.5A TO92-3
- Stock
- 35,977
- In Stock ：
- 35,977
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 1.5A
- Width :
- 4.19mm
- Weight :
- 240mg
- Gain Bandwidth Product :
- 200MHz
- Terminal Position :
- BOTTOM
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 25V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- -6V
- Mounting Type :
- Through Hole
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Mount :
- Through Hole
- Factory Lead Time :
- 6 Weeks
- Power Dissipation :
- 1W
- Base Part Number :
- SS8550
- Number of Terminations :
- 3
- Transition Frequency :
- 200MHz
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- -40V
- Collector Emitter Saturation Voltage :
- -280mV
- Pbfree Code :
- yes
- Frequency :
- 200MHz
- hFE Min :
- 85
- Terminal Finish :
- Tin (Sn)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 25V
- Published :
- 2004
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -25V
- Radiation Hardening :
- No
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 25V
- Current Rating :
- -1.5A
- Length :
- 5.2mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Packaging :
- Tape and Box (TB)
- Height :
- 5.33mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Datasheets
- SS8550CTA
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
SS8550CTA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -280mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 80mA, 800mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Its current rating is -1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 200MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 1.5A volts.
SS8550CTA Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz
SS8550CTA Applications
There are a lot of ON Semiconductor
SS8550CTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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