SS8550

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Mfr.Part #
SS8550
Manufacturer
MDD
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP 25V 1.5A SOT23
Stock
24,406
In Stock :
24,406

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Manufacturer :
MDD
Product Category :
Transistors - Bipolar (BJT) - Single
hFE Min :
85
Mount :
Through Hole
Polarity/Channel Type :
PNP
Packaging :
Tape and Box (TB)
Transistor Application :
AMPLIFIER
Contact Plating :
Tin
Number of Pins :
3
Collector Base Voltage (VCBO) :
-40V
Max Power Dissipation :
1W
Transistor Element Material :
SILICON
Radiation Hardening :
No
Current Rating :
-1.5A
Element Configuration :
Single
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
REACH SVHC :
No SVHC
Published :
2007
Base Part Number :
SS8550
Collector Emitter Breakdown Voltage :
25V
Pbfree Code :
yes
Operating Temperature :
150°C TJ
Max Breakdown Voltage :
25V
Power Dissipation :
1W
Collector Emitter Saturation Voltage :
-280mV
Current - Collector Cutoff (Max) :
100nA
Mounting Type :
Through Hole
Transition Frequency :
200MHz
JESD-609 Code :
e3
Vce Saturation (Max) @ Ib, Ic :
500mV @ 80mA, 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 100mA 1V
Terminal Position :
BOTTOM
Factory Lead Time :
6 Weeks
Lead Free :
Lead Free
Gain Bandwidth Product :
200MHz
Number of Terminations :
3
Max Collector Current :
1.5A
Transistor Type :
PNP
Collector Emitter Voltage (VCEO) :
25V
Number of Elements :
1
Voltage - Rated DC :
-25V
Weight :
240mg
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Emitter Base Voltage (VEBO) :
-6V
Frequency :
200MHz
RoHS Status :
ROHS3 Compliant
ECCN Code :
EAR99
Datasheets
SS8550
Introducing Transistors - Bipolar (BJT) - Single MDD SS8550 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Base Part Number:SS8550, Operating Temperature:150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, SS8550 pinout, SS8550 datasheet PDF, SS8550 amp .Beyond Transistors - Bipolar (BJT) - Single MDD SS8550 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

MDD SS8550


PNP 150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

SS8550DTA Overview


This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -280mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1.5A.In this part, there is a transition frequency of 200MHz.As a result, it can handle voltages as low as 25V volts.The maximum collector current is 1.5A volts.

SS8550DTA Features


the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz


SS8550DTA Applications


There are a lot of ON Semiconductor
SS8550DTA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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