SS8550BBU
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- Mfr.Part #
- SS8550BBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 25V 1.5A TO92-3
- Stock
- 5,925
- In Stock ：
- 5,925
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 30V
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Weight :
- 179mg
- Lead Free :
- Lead Free
- Transition Frequency :
- 200MHz
- Gain Bandwidth Product :
- 200MHz
- Current Rating :
- -1.5A
- Operating Temperature :
- 150°C TJ
- Voltage - Rated DC :
- -25V
- Packaging :
- Bulk
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 25V
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- -40V
- Mounting Type :
- Through Hole
- Pbfree Code :
- yes
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Frequency :
- 200MHz
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 100mA 1V
- Collector Emitter Saturation Voltage :
- -280mV
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Max Collector Current :
- 1.5A
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 25V
- JESD-609 Code :
- e3
- Number of Pins :
- 3
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- SS8550
- Max Power Dissipation :
- 1W
- hFE Min :
- 85
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- -6V
- Datasheets
- SS8550BBU
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS8550BBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 100mA 1V.With a collector emitter saturation voltage of -280mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 80mA, 800mA.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1.5A.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
SS8550BBU Features
the DC current gain for this device is 85 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz
SS8550BBU Applications
There are a lot of ON Semiconductor
SS8550BBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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