SS8550CBU
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- Mfr.Part #
- SS8550CBU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 25V 1.5A TO92-3
- Stock
- 117,703
- In Stock ：
- 117,703
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- hFE Min :
- 85
- Transistor Type :
- PNP
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Published :
- 2007
- Collector Emitter Breakdown Voltage :
- 25V
- JESD-609 Code :
- e3
- Emitter Base Voltage (VEBO) :
- -6V
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Current Rating :
- -1.5A
- Collector Emitter Saturation Voltage :
- -280mV
- Collector Base Voltage (VCBO) :
- -40V
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 1.5A
- Frequency :
- 200MHz
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Voltage - Rated DC :
- -25V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Bulk
- Transition Frequency :
- 200MHz
- Gain Bandwidth Product :
- 200MHz
- Factory Lead Time :
- 6 Weeks
- Element Configuration :
- Single
- Weight :
- 179mg
- Collector Emitter Voltage (VCEO) :
- 25V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Number of Pins :
- 3
- Base Part Number :
- SS8550
- Pbfree Code :
- yes
- Datasheets
- SS8550CBU
,TO-226_straightlead.jpg)
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS8550CBU Overview
In this device, the DC current gain is 120 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -280mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 80mA, 800mA.Keeping the emitter base voltage at -6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-1.5A).200MHz is present in the transition frequency.Maximum collector currents can be below 1.5A volts.
SS8550CBU Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz
SS8550CBU Applications
There are a lot of ON Semiconductor
SS8550CBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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