SS8550BBU
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- Mfr.Part #
- SS8550BBU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 25V 1.5A TO92-3
- Stock
- 33,877
- In Stock ：
- 33,877
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Max Power Dissipation :
- 1W
- Transistor Application :
- AMPLIFIER
- Polarity/Channel Type :
- PNP
- Current Rating :
- -1.5A
- Transistor Element Material :
- SILICON
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 25V
- Max Breakdown Voltage :
- 30V
- Radiation Hardening :
- No
- Max Collector Current :
- 1.5A
- Element Configuration :
- Single
- Terminal Finish :
- Tin (Sn)
- Collector Base Voltage (VCBO) :
- -40V
- Base Part Number :
- SS8550
- Voltage - Rated DC :
- -25V
- Collector Emitter Voltage (VCEO) :
- 25V
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Weight :
- 179mg
- Frequency :
- 200MHz
- Packaging :
- Bulk
- Collector Emitter Saturation Voltage :
- -280mV
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 85 @ 100mA 1V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- -6V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- hFE Min :
- 85
- Mount :
- Through Hole
- Gain Bandwidth Product :
- 200MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Pins :
- 3
- Transition Frequency :
- 200MHz
- ECCN Code :
- EAR99
- Power Dissipation :
- 1W
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Datasheets
- SS8550BBU
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
SS8550BBU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 85 @ 100mA 1V.With a collector emitter saturation voltage of -280mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 80mA, 800mA.If the emitter base voltage is kept at -6V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1.5A.A transition frequency of 200MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 1.5A volts at its maximum.
SS8550BBU Features
the DC current gain for this device is 85 @ 100mA 1V
a collector emitter saturation voltage of -280mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at -6V
the current rating of this device is -1.5A
a transition frequency of 200MHz
SS8550BBU Applications
There are a lot of ON Semiconductor
SS8550BBU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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