SS8050DTA
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- Mfr.Part #
- SS8050DTA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 25V 1.5A TO92-3
- Stock
- 152,460
- In Stock ：
- 152,460
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 25V
- Gain Bandwidth Product :
- 100MHz
- Base Part Number :
- SS8050
- Width :
- 3.86mm
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Published :
- 2007
- Frequency :
- 100MHz
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 80mA, 800mA
- Max Breakdown Voltage :
- 25V
- Max Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 25V
- REACH SVHC :
- No SVHC
- hFE Min :
- 85
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 25V
- Number of Terminations :
- 3
- Length :
- 4.58mm
- Packaging :
- Tape and Box (TB)
- Terminal Position :
- BOTTOM
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 100mA 1V
- Transistor Application :
- AMPLIFIER
- Height :
- 4.58mm
- Factory Lead Time :
- 6 Weeks
- Weight :
- 240mg
- Power Dissipation :
- 1W
- Collector Emitter Saturation Voltage :
- 500mV
- Radiation Hardening :
- No
- Current Rating :
- 1.5A
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 40V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 1.5A
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Contact Plating :
- Tin
- Transition Frequency :
- 190MHz
- Datasheets
- SS8050DTA
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
SS8050DTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 160 @ 100mA 1V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 80mA, 800mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1.5A.In the part, the transition frequency is 190MHz.This device can take an input voltage of 25V volts before it breaks down.A maximum collector current of 1.5A volts can be achieved.
SS8050DTA Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 80mA, 800mA
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 190MHz
SS8050DTA Applications
There are a lot of ON Semiconductor
SS8050DTA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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